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January Ordering Information. NOTE: When ordering, include the entire part number. These are N-Channel enhancement mode silicon gate. They are advanced power. These types can be operated directly from. Formerly developmental type TA File Number Drain to Source Voltage Note 1. V DGR. Continuous Drain Current. Pulsed Drain Current Note 3.
Gate to Source Voltage. Maximum Power Dissipation. Linear Derating Factor. Operating and Storage Temperature.
Maximum Temperature for Soldering. Leads at 0. Package Body for 10s, See Techbrief T pkg. This is a stress only rating and operation. Drain to Source Breakdown Voltage. Gate to Threshold Voltage. Zero-Gate Voltage Drain Current. On-State Drain Current Note 2.
I DSS. Figure 7. Gate to Source Leakage. Forward Transconductance Note 2. Turn-On Delay Time. Rise Time. Turn-Off Delay Time. Fall Time. Total Gate Charge. Gate to Source Charge. Independent of Operating Temperature. Q g TOT. Gate Charge is Essentially Independent of. Operating Temperature. Download IRF Datasheet. All of these power MOSFETs are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits. P D Linear Derating Factor. T pkg to IRF 6. NOTE: 1.
IRF234 Datasheet PDF
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.