BUZ 71A PDF

Data Sheet. October File Number This is an N-Channel enhancement mode silicon gate power. This type can be operated directly from integrated circuits. Ohm, N-. Channel Ordering Information.

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Data Sheet. June File Number This is an N-Channel enhancement mode silicon gate power. This type can be operated directly from integrated circuits. Formerly developmental type TA Ordering Information. NOTE: When ordering, use the entire part number. Drain to Source Breakdown Voltage Note 1. V DGR. Pulsed Drain Current Note 3. Gate to Source Voltage. Maximum Power Dissipation. Linear Derating Factor. Operating and Storage Temperature. Maximum Temperature for Soldering.

Leads at 0. Package Body for 10s, See Techbrief T pkg. This is a stress only rating and operation of the. Drain to Source Breakdown Voltage. Gate to Threshold Voltage. Zero Gate Voltage Drain Current.

Gate to Source Leakage Current. Drain to Source On Resistance Note 2. Forward Transconductance Note 2. Turn-On Delay Time. Rise Time. Turn-Off Delay Time. Fall Time. Input Capacitance. Output Capacitance. Reverse Transfer Capacitance. Thermal Resistance Junction to Case. Thermal Resistance Junction to Ambient.

BV DSS. V GS TH. I DSS. I GSS. C ISS. C OSS. C RSS. Continuous Source to Drain Current. Pulsed Source to Drain Current. Source to Drain Diode Voltage. Reverse Recovery Time. Reverse Recovery Charge. I SDM. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve Figure 3. See Figures 14 and More same datasheets. NOTE: 1.

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BUZ71A Datasheet PDF

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA Drain to Source Breakdown Voltage Note 1.

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