IRFP460 PDF

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Data Sheet. July File Number All of. These types can be operated directly from integrated. Formerly developmental type TA Ordering Information. NOTE: When ordering, use the entire part number. Drain to Source Voltage Note 1.

V DGR. Continuous Drain Current. Pulsed Drain Current Note 3. Gate to Source Voltage. Maximum Power Dissipation. Linear Derating Factor.

Operating and Storage Temperature. Maximum Temperature for Soldering. Leads at 0. Package Body for 10s, See Techbrief T pkg. This is a stress only rating and operation of the. Drain to Source Breakdown Voltage. Gate Threshold Voltage. Zero Gate Voltage Drain Current. On-State Drain Current Note 2. Gate to Source Leakage Current. Drain to Source On Resistance Note 2. Forward Transconductance Note 2. Turn-On Delay Time. Rise Time. Turn-Off Delay Time. Fall Time. Total Gate Charge.

Gate to Source Charge. Input Capacitance. Output Capacitance. Reverse Transfer Capacitance. Internal Drain Inductance. Internal Source Inductance. BV DSS. V GS TH. I DSS. I GSS. Q g TOT. C ISS. C OSS. C RSS. Independent of Operating Temperature. Gate Charge is. Essentially Independent of OperatingTemperature. Measured from the Drain. Lead, 6mm 0. Package to Center of Die. Measured from the Source. Header to Source Bonding.

Symbol Showing the. Internal Device. Thermal Resistance Junction to Case. Thermal Resistance Junction to Ambient. Free Air Operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated circuits. P D Linear Derating Factor. NOTE: 1.

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